Parameters
Category Parameter Specification / Interpretation for 5SHX2645L0004
General Device Type Asymmetric, Non-Punch-Through (NPT), Press-Pack IGCT
Series 5SHX 26 (Asymmetric IGCT Series)
Blocking Voltage Class 4500 V (Indicated by "2645" – 26xx series, 45 = 4.5kV)
Voltage Ratings Repetitive Peak Off-State Voltage (VDRM) 4500 V
Non-Repetitive Peak Off-State Voltage (VDSM) ~5000 V
Current Ratings Average On-State Current (ITAV) @ Tc=85°C ~2000 - 2800 A (Highly dependent on cooling, frequency, and waveform)
RMS On-State Current (ITRMS) ~3000 - 4000 A
Peak Controllable Current (ITGQM) ~4000 - 5000 A
Non-Rep. Surge Current (ITSM) ~30 - 40 kA (for 10 ms half-sine)
Switching Characteristics Turn-On Time (ton) 1 - 3 µs (with gate unit)
Turn-Off Time (toff) 15 - 25 µs (including storage time)
Turn-Off Safe Operating Area (RBSOA) Excellent, snubberless operation possible.
Critical Rate of Rise of Off-State Voltage (dv/dt) > 2000 V/µs
Thermal & Mechanical Junction Operating Temperature (Tvj) -40°C to +125°C
Clamping Force Critical! Typically 30 - 40 kN. Must be applied uniformly with calibrated tooling.
Mounting Double-sided press-fit between liquid-cooled heatsinks.
Cooling Required Forced liquid cooling (deionized water/glycol) is standard.
Gate Drive Gate Unit Requirement ABSOLUTELY REQUIRED. Must be driven by a dedicated, matched ABB IGCT Gate Unit (e.g., 5STP 18L4200 or similar) which provides the very high peak gate current (>1000 A) for hard-driven turn-on and precise turn-off.
Companion Diode Required Series Diode An asymmetric press-pack diode (e.g., ABB 5SDF 10H4503) must be connected in series with this IGCT to block reverse voltage in an inverter leg.
Typical Application Circuit Converter Topology 3-Level Neutral Point Clamped (NPC) / ANPC VSC, 2-Level VSC with series connection.
System Examples ACS 6080 Drive, PCS 8000 STATCOM, HVDC Light Valve Submodule.
The ABB 5SHX2645L0004 is a high-voltage, high-current asymmetric Integrated Gate-Commutated Thyristor (IGCT) semiconductor device, representing the core switching technology within ABB's most advanced medium-voltage (MV) and high-voltage power conversion systems. It is a press-pack, non-punch-through (NPT) IGCT designed as a primary power switch in high-power, multi-level voltage source converters (VSCs) for the most demanding industrial and grid applications.