Parameters Category Parameter Specification for 5SHY4045L0003 General Device Type Reverse-Conducting, Asymmetric, Press-Pack IGCT (Integrated Gate-Commutated Thyristor) with Integrated Anti-Parallel Diode Series 5SHY 40 Voltage Ratings Repetitive Peak Off-State Voltage (VDRM) 4500 V (Primary voltage class indicated by "4045") Non-Repetitive Peak Off-State Voltage (VDSM) ~5000 V Gate-Cathode Reverse Voltage ~20 V Current Ratings Average On-State Current (ITAV) ~2000 - 3000 A (highly dependent on cooling and frequency) RMS On-State Current (ITRMS) ~3000 - 4500 A Non-Repetitive Peak Surge Current (ITSM) ~30 - 50 kA (for 10 ms sine wave) Peak Controllable Current (ITGQM) ~4000 - 6000 A Switching Characteristics Turn-On Time (ton) < 5 µs (typical, with gate unit) Turn-Off Time (toff) ~15 - 25 µs (including storage time) Critical Rate of Rise of Off-State Voltage (dv/dt) > 1000 V/µs Integrated Diode Reverse Recovery Charge (Qrr) ~5 - 10 mC (at high di/dt) Thermal & Mechanical Junction Operating Temperature (Tvjop) -40°C to +125°C Storage Temperature -40°C to +125°C Clamping Force Critical. Typically 25 - 35 kN (must be applied via calibrated tool). Housing Material Ceramic-metal (Press-Pack) Cooling Double-sided, liquid or forced air cooling required. Gate Drive Gate Unit Requirement Must be driven by a dedicated, matched ABB IGCT Gate Unit (e.g., 5STP... series) which provides the very high peak gate current (>>100A) required for hard switching. Typical Application Used In Converters 3-Level NPC (Neutral Point Clamped) Inverter, 3-Level Active Front End. System Examples ABB ACS 6000 Drive, PCS 6000 STATCOM, HVDC Light Valve.