CHIP ELECTRONIC COMPONENTS
Infinite innovation, the future of chip systems
CHIP ELECTRONIC COMPONENTS
Infinite innovation, the future of chip systems
CHIP ELECTRONIC COMPONENTS
Infinite innovation, the future of chip systems
PRODUCT POSITION:HOMEPRODUCT—STP80PF55
STP80PF55
P-channel STripFET ™ Power MOSFET, STMicroelectronics STripFET TM MOSFET, with a bandwidth breakdown voltage range, can provide ultra-low gate telephone and low on resistance. MOSFET transistor Packaging: TO-220-3
DESCRIBE

Rated voltage (DC): -55.0 V
Rated current: -80.0 A
Number of channels: 1
Pin count: 3
Drain source resistance: 0.018 Ω
Polarity: P-Channel
Dissipative power: 300 W
Threshold voltage: 3 V
Drain source voltage (Vds): 55 V
Leakage source breakdown voltage: 55.0 V
Gate source breakdown voltage: ± 16.0 V
Continuous drain current (Ids): 80.0 A
Rise time: 190 ns
Input capacitance (Ciss): 5500pF @ 25V (Vds)
Rated power (Max): 300 W
Descent time: 80 ns
Working temperature (Max): 175 ℃
Working temperature (Min): -55 ℃
Dissipative power (Max): 300W (Tc)

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